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APTC80A10SCT
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
NTC2 VBUS Q1
VDSS = 800V RDSon = 100mW max @ Tj = 25C ID = 42A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features *
G1 OUT S1 Q2
*
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
G2
0/VBUS S2 NTC1
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
OUT VBUS OUT
0/VBUS
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile Max ratings 800 42 32 172 30 100 416 24 0.5 670 Unit V A
APTC80A10SCT - Rev 1 May, 2004
Tc = 25C Tc = 80C
Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
Tc = 25C
V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APTC80A10SCT
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 750A
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Min 800 Tj = 25C Tj = 125C 2.1
Typ
Max 75 750 100 3.9 175
Unit V A mW V nA
VGS = 10V, ID = 21A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 42A Inductive switching @ 125C VGS = 15V VBus = 533V ID = 42A RG = 1.8W Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8 Min Typ 6761 3137 161 273 36 138 10 13 83 35 437 417 765 513 J J Max Unit pF
nC
ns
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s IF = 30A VR = 133V di/dt = 200A/s Min Tc = 85C Typ 30 1.05 Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 24 48 33 150 1 ns nC
APTC80A10SCT - Rev 1 May, 2004
Max 1.15
Unit A V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
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APTC80A10SCT
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions
50% duty cycle
Min Tc = 125C Tj = 25C Tj = 175C
IF = 20A
Typ 20 1.6 2.6 56 180 132
Max 1.8 3.0
Unit A V nC pF
IF = 20A, VR = 600V di/dt =1200A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode 2500 -40 -40 -40
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Typ Max 0.3 1.2 0.8 150 125 100 4.7 160 Typ 68 4080 Max Unit
C/W
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g Unit kW K
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = R 25 e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e
Min
Package outline
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3-7
APTC80A10SCT - Rev 1 May, 2004
APTC80A10SCT
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 ID, Drain Current (A) ID, Drain Current (A) 100 80 60 40 20 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 40 50 60 70 80 90 ID, Drain Current (A)
VGS=20V VGS=10V
Transfert Characteristics 150
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
6.5V 6V 5.5V 5V 4.5V 4V
120 90 60 30 0 0
T J=25C T J=125C T J=-55C
1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 45 ID, DC Drain Current (A) 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (C)
APTC80A10SCT - Rev 1 May, 2004
Normalized to VGS=10V @ 21A
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APTC80A10SCT
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss Crss 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 21A
100
limited by RDSon
100s
10
1ms 10ms
1
Single pulse TJ=150C 1
100ms
0 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 Gate Charge (nC)
VDS=640V ID=42A TJ=25C VDS=160V VDS=400V
10000
1000
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-7
APTC80A10SCT - Rev 1 May, 2004
APTC80A10SCT
Delay Times vs Current Rise and Fall times vs Current 50 td(off) td(on) and td(off) (ns) 40 tr and tf (ns)
VDS=533V RG=1.8 TJ=125C L=100H
100 80 60 40 20 0 20 30 40 50 60 ID, Drain Current (A) 70
tf
30 20 10 0 20
VDS=533V RG=1.8 TJ=125C L=100H
tr
td(on)
30
40 50 60 ID, Drain Current (A)
70
Switching Energy vs Current 1.6
VDS=533V RG=1.8 TJ=125C L=100H
Switching Energy vs Gate Resistance 3 Switching Energy (mJ)
VDS=533V ID=42A TJ=125C L=100H
Eon and Eoff (mJ)
1.2
Eon
2.5 2 1.5 1 0.5 0
Eoff
0.8 Eoff 0.4
Eon
0 20 30 40 50 60 ID, Drain Current (A) 70
0
2.5
5
7.5
10
12.5
15
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 ID, Drain Current (A) 40
VDS=533V D=50% RG=1.8 TJ=125C
IDR, Reverse Drain Current (A)
400
100
TJ=150C
10
TJ=25C
1 0.2 0.6 1 1.4 1.8
VSD, Source to Drain Voltage (V)
APT website - http://www.advancedpower.com
6-7
APTC80A10SCT - Rev 1 May, 2004
APTC80A10SCT
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 Single Pulse 0.9
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics 800 IR Reverse Current (A)
40
IF Forward Current (A)
30 20
TJ=75C
600
400
TJ=125C
TJ=75C TJ=125C TJ=175C TJ=25C
10 0 0 0.5 1 1.5 2
TJ=175C
200
2.5
3
3.5
0 400
600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
800 1000 1200 1400 1600 VR Reverse Voltage (V)
1600 C, Capacitance (pF) 1200 800 400 0 1 10 100 VR Reverse Voltage 1000
APTC80A10SCT - Rev 1 May, 2004
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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